SnSxSe2-x单晶纳米片的可控制备与表征

锡二硫族化合物可以通过改变硫和硒的含量来连续调控三元合金材料的带隙、载流子浓度等物理化学性质,在电子和光电子器件应用上具有巨大的潜力。本文采用化学气相沉积(CVD)技术可控地制备了不同元素组分的SnS_xSe_2-x(x=0,0.2,0.5,0.8,1.0,1.2,1.5,1.8,2.0)单晶纳米片。采用扫描电子显微镜(SEM)、原子力显微镜(AFM)、能量色散X射线光谱(EDS)、透射电子显微镜(TEM)以及拉曼光谱等手段对SnS_xSe_2-x纳米片进行了综合表征。结果表明本方法成功实现了元素百分比可调的SnS_xSe_2-x单晶纳米片的可控制备。重点研究了依赖于元素百分比的SnS_xSe_2-x的拉曼特征谱,实验结果与基于密度泛函理论(DFT)的第一性原理计算得到的SnS_xSe_2-x的拉曼仿真谱高度吻合,理论计算结果较好地诠释了实验拉曼光谱发生变化的原因。本研究提供了一种元素百分比可调的三元SnS_xSe_2-x单晶纳米片的可控制备方法,同时对锡二硫族化合物的明确、无损识别提供了方案。     

Dynamic stability of a class of fractional-order nonlinear systems via fixed point theory

In this paper, the problem of the uniform stability for a class of fuzzy fractional-order genetic regulatory networks with random discrete delays, distributed delays, and parameter uncertainties is studied. Although there is a portion of literature on using fixed point theorems to study the stability of fractional neural networks, most of them required the fractional order to be in $\left(\frac{1}{2},1\right)$. However, the case of the fractional-order belonging to $(0,\frac{1}{2})$ has not been discussed. To solve it, this work proposes a novel idea of using fixed point theory to study the stability of fuzzy (0,1) order neural networks, the problem of the uniqueness of the solution of the considered genetic regulatory networks is resolved, and a novel sufficient condition to guarantee the uniform stability of above genetic regulatory networks is also derived. Eventually, an example is given to demonstrate that the obtained result is effective.     

Full cross-diffusion limit in the stationary Shigesada-Kawasaki-Teramoto model

This paper studies the asymptotic behavior of coexistence steady-states of the Shigesada-Kawasaki-Teramoto model as both cross-diffusion coefficients tend to infinity at the same rate. In the case when either one of two cross-diffusion coefficients tends to infinity, Lou and Ni [18] derived a couple of limiting systems, which characterize the asymptotic behavior of coexistence steady-states. Recently, a formal observation by Kan-on [10] implied the existence of a limiting system including the nonstationary problem as both cross-diffusion coefficients tend to infinity at the same rate. This paper gives a rigorous proof of his observation as far as the stationary problem. As a key ingredient of the proof, we establish a uniform $L^{\infty }$ estimate for all steady-states. Thanks to this a priori estimate, we show that the asymptotic profile of coexistence steady-states can be characterized by a solution of the limiting system.     

从化学视角剖析烫发、染发原理及顺序*

从头发的结构和组成出发分析头发形状和颜色改变的可能性,剖析烫发、染发的化学原理,阐释先烫发后染发的本质原因,从化学视角辨证地看待烫发、染发的利弊。     

A new idea to construct the fractal interpolation function

The aim of this paper is to present a new idea to construct the nonlinear fractal interpolation function, in which we exploit the Matkowski and the Rakotch fixed point theorems. Our technique is different from the methods presented in the previous literatures.     

Characterization of embeddings of Sobolev-type spaces into generalized Hölder spaces defined by Lp-modulus of smoothness

We prove a sharp estimate for the k-modulus of smoothness, modelled upon a $L^p$-Lebesgue space, of a function f in $W^k{L}^{\frac{pn}{n+kp},p}(\mathrm{\Omega })$, where Ω is a domain with minimally smooth boundary and finite Lebesgue measure, $k,n\in \mathbb{N}$, $k<n$ and $\frac{n}{n?k}<p<+\infty$. This sharp estimate is used to establish necessary and sufficient conditions for continuous embeddings of Sobolev-type spaces into generalized Hölder spaces defined by means of the k-modulus of smoothness. General results are illustrated with examples. In particular, we obtain a generalization of the classical Jawerth embeddings.     

TFSI钝化晶体硅表面性质的第一性原理研究

晶体硅表面钝化是高效率晶体硅太阳能电池的核心技术,直接影响晶体硅器件的性能。本文采用第一性原理方法研究了一种超强酸-双三氟甲基磺酰亚胺(TFSI)钝化晶体硅(001)表面。研究发现,TFSI的四氧原子结构能够与Si(001)表面Si原子有效成键,吸附能达到-5.124 eV。电子局域函数研究表明,TFSI的O原子与晶体硅表面的Si的成键类型为金属键。由态密度和电荷差分密度分析可知,Si表面原子的电子向TFSI转移,从而有效降低了Si表面的电子复合中心,有利于提高晶体硅的少子寿命。Bader电荷显示,伴随着TFSI钝化晶体硅表面的Si原子,表面Si原子电荷电量减少,而TFSI中的O原子和S原子电荷电量相应增加,进一步证明了TFSI钝化Si表面后的电子转移。该工作为第一性原理方法预测有机强酸钝化晶体硅表面的钝化效果提供了数据支撑。